Date: Sept 4, Thursday, 2025
Time: 6:00pm – 7pm Network
7pm -8:30pm Presentation
Avenue: 2880 Zanker Road, Suite 103, San Jose, CA 95134 (ITRI)
Subject: Unleash AI Performance with Revolutionary 3D X-DRAM and X-HBM Technologies
Speaker: Andy Hsu and Ray Tsay, NEO Semiconductor
Andy Hsu is the Founder and CEO of NEO Semiconductor. He has more than 25 years of experience in the semiconductor and memory industry, an Andy has more than 120 granted U.S. patents. He majored at Neural Networks and Artificial Intelligence (AI) for a master’s degree in Electrical, Computer, and System Engineering (ECSE) from Rensselaer Polytechnic Institute (RPI) in New York. He earned a bachelor’s degree from the National Cheng-Kung University in Taiwan.
Ray Tsay is the Co-Founder & VP of Engineering of NEO Semiconductor. Ray has over 30 years of experience in the semiconductor industry. Prior to NEO, he worked at many companies including Integrated Silicon Solution (ISSI), ICT, and EG&G Reticon. He has broad experience in various products such as CCD, CPLD, SRAM, EEPROM, EPROM, and flash memory. He holds a MS degree in Electrical and Computer Engineering from Arizona State University, a MS in Chemical and Material Engineering from the University of Iowa, and a BS in Chemical Engineering from National Central University in Taiwan.
Abstract
AI chip performance is fundamentally constrained by memory capacity and bandwidth—a challenge known as the “memory wall.” Current AI architectures based on traditional DRAM and HBM technologies struggle to scale beyond 64 GB capacity and a 4096-bit bus width, which is insufficient for the growing demands of next-generation AI workloads.
To address this limitation, a game-changing 3D X-DRAM technology has been invented, leveraging a 3D NAND-like cell structure to achieve exceptionally high density. These 3D array cells can be manufactured using a modified process derived from the mature 3D NAND flash process, enabling a 10× increase in DRAM capacity while significantly reducing development complexity and costs.
Furthermore, 3D X-DRAM enables a new class of extremely high bandwidth memory, called X-HBM. By eliminating TSVs (through-silicon via) and using advanced hybrid bonding technology, X-HBM delivers a 16× increase in bandwidth while substantially lowering power consumption and heat generation. This breakthrough represents a transformative innovation for AI applications, unlocking unprecedented performance and efficiency.